document number: 71515 www.vishay.com s10-2102-rev. a, 27-sep-10 1 automotive n-channel 100 v (d-s) 175 c mosfet sqm120n10-09 vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ? compliant to rohs directive 2002/95/ec ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 100 r ds(on) ( ? ) at v gs = 10 v 0.0095 i d (a) 120 configuration single d g s n-channel mosfet to-263 s d g top view ordering information package to-263 lead (pb)-free and halo gen-free SQM120N10-09-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 120 a t c = 125 c 73 continuous source curre nt (diode conduction) a i s 120 pulsed drain current b i dm 480 single pulse avalanche current l = 0.1 mh i as 73 single pulse avalanche energy e as 266 mj maximum power dissipation b t c = 25 c p d 375 w t c = 125 c 125 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.4
www.vishay.com document number: 71515 2 s10-2102-rev. a, 27-sep-10 sqm120n10-09 vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 100 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 3.0 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 100 v - - 1.0 a v gs = 0 v v ds = 100 v, t j = 125 c - - 50 v gs = 0 v v ds = 100 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 120 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 30 a - 0.0079 0.0095 ? v gs = 10 v i d = 30 a, t j = 125 c - - 0.019 v gs = 10 v i d = 30 a, t j = 175 c - - 0.025 forward transconductance b g fs v ds = 15 v, i d = 30 a - 99 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 6915 8645 pf output capacitance c oss - 635 795 reverse transfer capacitance c rss - 280 350 total gate charge c q g v gs = 10 v v ds = 50 v, i d = 85 a - 120 180 nc gate-source charge c q gs -30- gate-drain charge c q gd - 28.5 - turn-on delay time c t d(on) v dd = 50 v, r l = 0.6 ? i d ? 85 a, v gen = 10 v, r g = 2.5 ? -2132 ns rise time c t r -2436 turn-off delay time c t d(off) -5278 fall time c t f -1624 source-drain diode ratings and characteristics b pulsed current a i sm - - 480 a forward voltage v sd i f = 85 a, v gs = 0 v - 0.9 1.5 v
document number: 71515 www.vishay.com s10-2102-rev. a, 27-sep-10 3 sqm120n10-09 vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 25 50 75 100 125 150 175 048121620 v gs =10vthru6v v gs =4v v gs =5v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 40 80 120 160 200 0 1428425670 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c 0 2000 4000 6000 8000 10 000 0 20406080100 c i ss c r ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 20 40 60 80 100 120 0246810 t c = 125 c t c = 25 c t c = - 55 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0 0.004 0.008 0.012 0.016 0.020 0 20 40 60 80 100 120 v gs =10v r d s (on) - on-re s i s tance ( ) i d - drain current (a) 0 2 4 6 8 10 0 20 40 60 80 100 120 i d =85a v d s =50v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v)
www.vishay.com document number: 71515 4 s10-2102-rev. a, 27-sep-10 sqm120n10-09 vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source breakdown vs. junction temperature 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =30a v gs =10v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0 0.01 0.02 0.03 0.04 0.05 0246810 t j =25 c t j = 150 c r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 v s d - s ource-to-drain voltage (v) i s - s ource current (a) t j = 25 c t j = 150 c - 1.8 - 1.4 - 1.0 - 0.6 - 0.2 0.2 0.6 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 50 - 25 0 25 50 75 100 125 150 175 v ds - drain-to-source voltage (v) t j - junction temperature (c) i d =10ma 100 106 112 118 124 130
document number: 71515 www.vishay.com s10-2102-rev. a, 27-sep-10 5 sqm120n10-09 vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized th ermal transient impedance, junction-to-ambient v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified - drain current (a) i d t c = 25 c single pulse 1 ms 100 ms, 1 s, 10 s, dc 100 s r ds(on) * limited by 10 ms 0.01 0.1 1 10 100 bvdss limited i dm limited 0.01 0.1 1 10 100 1000 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
www.vishay.com document number: 71515 6 s10-2102-rev. a, 27-sep-10 sqm120n10-09 vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) normalized th ermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction to ambient (25 c) - normalized transient thermal impedance junction to case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71515 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 30 0.05 0.02 single pulse
document number: 71198 www.vishay.com revison: 03-jan-11 1 package information vishay siliconix to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum features of heat sink tab and plastic. 2. no more than 25 % of l1 can fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. detail a (rotated 90) s ection a-a -a- -b- 0 - 5 d1 a a l1 l4 e b2 b e a c2 c l2 d l3 l m c1 c b1 b detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t10-0738-rev. j, 03-jan-11 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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